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Modelling of the MOS Transistor with Spatially Non-Uniform Temperature Profile

Nooshabadi, SV and Visweswaran, G (1998). Modelling of the MOS Transistor with Spatially Non-Uniform Temperature Profile. In: 3rd International Workshop on thermal investigation of ICs and Microstructures, France, 21 - 23 Sept. 1997.

Document type: Conference Paper
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Author Nooshabadi, SV
Visweswaran, G
Title Modelling of the MOS Transistor with Spatially Non-Uniform Temperature Profile
Conference Name 3rd International Workshop on thermal investigation of ICs and Microstructures
Conference Location France
Conference Dates 21 - 23 Sept. 1997
Place of Publication USA
Publisher IEEE
Publication Year 1998
HERDC Category E5 - Conference Publication - Refereed without National or International significance (internal)
Additional Notes ISBN/ISSN:
 
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