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Optimizing Gallium Arsenide multiple quantum wells as high-performance photovoltaic devices

Thilagam, A, Singh, J and Stulik, P (1998). Optimizing Gallium Arsenide multiple quantum wells as high-performance photovoltaic devices. Solar Energy Materials and Solar Cells,50(1):243-249.

Document type: Journal Article
Citation counts: Scopus Citation Count Cited 1 times in Scopus Article | Citations

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Title Optimizing Gallium Arsenide multiple quantum wells as high-performance photovoltaic devices
Author Thilagam, A
Singh, J
Stulik, P
Journal Name Solar Energy Materials and Solar Cells
Publication Date 1998
Volume Number 50
Issue Number 1
ISSN 0927-0248   (check CDU catalogue open catalogue search in new window)
Scopus ID 2-s2.0-0031699675
Start Page 243
End Page 249
Total Pages 7
Place of Publication Amsterdam, netherlands
Publisher Elsevier
HERDC Category C1 - Journal Article (DEST)
Abstract We examine the possibility of using gallium arsenide (GaAs) quantum wells, which have significantly high absorption coefficient for photon energies near the energy band gap, as high-performance solar cells. Using a semi-empirical model of the absorption spectrum, we determine the critical well widths at which the efficiencies of solar cells based on the GaAs/AlxGa1−xAs quantum well structure can be optimized.
DOI http://dx.doi.org/10.1016/S0927-0248(97)00154-2   (check subscription with CDU E-Gateway service for CDU Staff and Students  check subscription with CDU E-Gateway in new window)
 
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