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Free-electron processes in amorphous semiconductors

Singh, J (2003). Free-electron processes in amorphous semiconductors. Journal of Materials Science: materials in electronics,14(10-12):689-692.

Document type: Journal Article
Citation counts: Scopus Citation Count Cited 1 times in Scopus Article | Citations

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Title Free-electron processes in amorphous semiconductors
Author Singh, J
Journal Name Journal of Materials Science: materials in electronics
Publication Date 2003
Volume Number 14
Issue Number 10-12
ISSN 1573-482X   (check CDU catalogue open catalogue search in new window)
Scopus ID 2-s2.0-0242380246
Start Page 689
End Page 692
Total Pages 4
Place of Publication Dordrecht, Netherlands
Publisher Kluwer Academic Publishers
Field of Research 0204 - Condensed Matter Physics
0206 - Quantum Physics
0912 - Materials Engineering
HERDC Category C1 - Journal Article (DEST)
Abstract Several processes based on the free-electron concept are briefly reviewed in this paper. Using a quantum-tunneling model, a simple theory for determining the effective mass of charge carriers in amorphous semiconductors is presented. It is shown that a charge carrier has different effective masses in the extended and tail states, and that the sign of the effective mass changes as the charge carrier crosses its mobility edge. This is used to explain the anomalous Hall coefficient observed in a-Si : H. The theory is used to calculate Tauc's absorption relation, theoretically. It is found that deviations from the Tauc plot observed in some a-solids may be attributed to the photon-energy-dependent matrix element. Some transport properties of charge carriers are also considered.
Keywords conduction
silicon
sign
DOI http://dx.doi.org/10.1023/A:1026174903429   (check subscription with CDU E-Gateway service for CDU Staff and Students  check subscription with CDU E-Gateway in new window)
 
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