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Acoustic-phonon-assisted localization of free excitons due to interface roughness in quantum wells

Oh, IK and Singh, J (2004). Acoustic-phonon-assisted localization of free excitons due to interface roughness in quantum wells. Journal of Applied Physics,95(9):4883-4889.

Document type: Journal Article
Citation counts: Scopus Citation Count Cited 1 times in Scopus Article | Citations

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Title Acoustic-phonon-assisted localization of free excitons due to interface roughness in quantum wells
Author Oh, IK
Singh, J
Journal Name Journal of Applied Physics
Publication Date 2004
Volume Number 95
Issue Number 9
ISSN 1089-7550   (check CDU catalogue open catalogue search in new window)
Scopus ID 2-s2.0-2442656958
Start Page 4883
End Page 4889
Total Pages 7
Place of Publication New York, US
Publisher American Institute of Physics
Field of Research MATHEMATICAL SCIENCES
PHYSICAL SCIENCES
ENGINEERING
HERDC Category C1 - Journal Article (DEST)
Abstract A theory of localization of free excitons due to interface roughness is presented. Using the perturbation approach, the rate of localization of free excitons through acoustic phonon emission is calculated in GaAs quantum wells as a function of the width of quantum wells, lateral size of well width fluctuation, and center-of-mass kinetic energy. It is found that the rate of localization is sensitive to the center-of-mass kinetic energy of a free exciton. The results agree with those of recent photoluminescence experiments employed to study the localization of free excitons due to roughness in GaAs quantum wells.
Keywords epitaxial-growth
spectra
heterointerfaces
microroughness
relaxation
defects
DOI http://dx.doi.org/10.1063/1.1691478   (check subscription with CDU E-Gateway service for CDU Staff and Students  check subscription with CDU E-Gateway in new window)
 
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