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Photoexcitation-induced processes in amorphous semiconductors

Singh, Jai (2005). Photoexcitation-induced processes in amorphous semiconductors. In: Luches, A. and Peled, A. 4th International Conference on Photo-excited Processes and Applications, Lecce, Italy, 5-9 September 2005.

Document type: Conference Paper
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Author Singh, Jai
Title Photoexcitation-induced processes in amorphous semiconductors
Conference Name 4th International Conference on Photo-excited Processes and Applications
Conference Location Lecce, Italy
Conference Dates 5-9 September 2005
Conference Publication Title Applied Surface Science
Editor Luches, A.
Peled, A.
Place of Publication Netherlands
Publisher Elsevier BV
Publication Year 2005
Volume Number 248
ISSN 0169-4332   (check CDU catalogue open catalogue search in new window)
Start Page 50
End Page 55
Total Pages 6
Field of Research 0204 - Condensed Matter Physics
HERDC Category E1 - Conference Publication (DEST)
Abstract Theories for the mechanism of photo-induced processes of photodarkening (PD), volume expansion (VE) in amorphous chalcogenides are presented. Rates of spontaneous emission of photons by radiative recombination of excitons in amorphous semiconductors are also calculated and applied to study the excitonic photoluminescence in a-Si:H. Results are compared with previous theories.
 
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Created: Fri, 12 Sep 2008, 08:35:25 CST by Administrator