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Radiative recombination of excitons in amorphous semiconductors

Singh, J (2005). Radiative recombination of excitons in amorphous semiconductors. In: Petelenz, P and Schreiber, M 6th International Conference on Excitonic Process in Condensed Matter (EXCON), Cracow, Poland, 6-9 July, 2004.

Document type: Conference Paper
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Author Singh, J
Title Radiative recombination of excitons in amorphous semiconductors
Conference Name 6th International Conference on Excitonic Process in Condensed Matter (EXCON)
Conference Location Cracow, Poland
Conference Dates 6-9 July, 2004
Conference Publication Title Journal of Luminescence
Editor Petelenz, P
Schreiber, M
Place of Publication Amsterdam, Netherlands
Publisher Elsevier BV
Publication Year 2005
Volume Number 112
ISSN 0022-2313   (check CDU catalogue open catalogue search in new window)
Start Page 40
End Page 44
Total Pages 5
Field of Research 0204 - Condensed Matter Physics
HERDC Category E1 - Conference Publication (DEST)
Abstract A theory for calculating the radiative lifetime of excitons in amorphous semiconductors is presented. Four possibilities of excitonic radiative recombination are considered and the corresponding rates are derived at thermal equilibrium. The radiative lifetime is calculated from the inverse of the maximum rate for all the four possibilities. Results agree very well with experiments.
 
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Created: Fri, 12 Sep 2008, 08:35:25 CST by Administrator