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Radiative lifetime of excitonic photoluminescence in amorphous semiconductors

Singh, Jai and Oh, I. (2005). Radiative lifetime of excitonic photoluminescence in amorphous semiconductors. Journal of Applied Physics,97(6):1-14.

Document type: Journal Article
Citation counts: Scopus Citation Count Cited 11 times in Scopus Article | Citations

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IRMA ID 80801245xPUB64
Title Radiative lifetime of excitonic photoluminescence in amorphous semiconductors
Author Singh, Jai
Oh, I.
Journal Name Journal of Applied Physics
Publication Date 2005
Volume Number 97
Issue Number 6
ISSN 1089-7550   (check CDU catalogue  open catalogue search in new window)
Scopus ID 2-s2.0-20644464769
Start Page 1
End Page 14
Total Pages 14
Place of Publication New York, US
Publisher American Institute of Physics
Field of Research MATHEMATICAL SCIENCES
PHYSICAL SCIENCES
ENGINEERING
HERDC Category C1 - Journal Article (DEST)
Abstract A comprehensive theory for calculating the radiative lifetime of excitons in amorphous semiconductors is presented. Four possibilities for the radiative recombination of an exciton are considered: (i) both excited electron and hole are in their extended states, (ii) electron is in the extended and hole in tail states, (iii) electron is in the tail and hole in extended states and (iv) both in their tail states. Rates of radiative recombination corresponding to each of the four possibilities are derived: (a) within two-level approximation, and at (b) nonequilibrium and (c) equilibrium conditions. It is found that rates derived under the nonequilibrium condition have no finite peak values with respect to the photoluminescence energy. However, considering that the maximum value of a rate derived at equilibrium gives the inverse of the radiative lifetime, the latter is calculated for all the four possibilities in a-Si:H. The radiative lifetime of excitons is found to be in the ns time range for possibilities (i)-(iii) at temperatures 15-20 K and in the mu s range at 3.7 K. When the recombination occurs from the tail states, the radiative lifetime gets prolonged due to the localization of charge carriers. Results agree very well with experiments and are compared with other theories as well.
Keywords frequency-resolved spectroscopy
effective-mass
recombination
carriers
silicon
decay
DOI http://dx.doi.org/10.1063/1.1854730   (check subscription with CDU E-Gateway service for CDU Staff and Students  check subscription with CDU E-Gateway in new window)
 
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