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Exciton-exciton interaction in semiconductor quantum wells

Thilagam, A (2001). Exciton-exciton interaction in semiconductor quantum wells. Physical Review B (Condensed Matter and Materials Physics),63(4):045321.

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Title Exciton-exciton interaction in semiconductor quantum wells
Author Thilagam, A
Journal Name Physical Review B (Condensed Matter and Materials Physics)
Publication Date 2001
Volume Number 63
Issue Number 4
Start Page 045321
Abstract Analytical expressions of the effective exciton-exciton interaction in quantum wells are derived with a main focus on the dependence of the interactions on the quantum-well width. Any modification in the strength of the exciton-exciton interactions due to confinement is incorporated in alpha, a measure of dimensionality of the confined excitonic system. The flexibility of the derived expressions is shown in a systematic study of both the direct and exchange terms of the exciton-exciton interaction in CdTe/ZnxCd1-xTe and GaAs/AlxGa1-xAs quantum wells. Results show the appreciable sensitivity of interexcitonic interaction to cu due to changes in the extension of excitonic radial distribution and strength at which local charges are neutralized, perpendicular to the direction of the growth of well layers.
Keywords fractional-dimensional space
quasi-2-dimensional excitons
heterostructures
absorption
wires
superlattices
confinement
scattering
energies
gaas
DOI http://dx.doi.org/10.1103/PhysRevB.63.045321   (check subscription with CDU E-Gateway service for CDU Staff and Students  check subscription with CDU E-Gateway in new window)
 
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Created: Wed, 28 Nov 2007, 14:16:08 CST