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Radiative recombination of excitons in amorphous semiconductors

Singh, Jai (2005). Radiative recombination of excitons in amorphous semiconductors. Journal of Luminescence,112(31-Dec):40-44.

Document type: Journal Article
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IRMA ID 80801245xPUB56
Title Radiative recombination of excitons in amorphous semiconductors
Author Singh, Jai
Journal Name Journal of Luminescence
Publication Date 2005
Volume Number 112
Issue Number 31-Dec
ISSN 0022-2313   (check CDU catalogue open catalogue search in new window)
Start Page 40
End Page 44
Total Pages 5
Place of Publication Amsterdam
Publisher Elsevier
Field of Research 0204 - Condensed Matter Physics
0205 - Optical Physics
0306 - Physical Chemistry (incl. Structural)
HERDC Category C1 - Journal Article (DEST)
Abstract A theory for calculating the radiative lifetime of excitons in amorphous semiconductors is presented. Four possibilities of excitonic radiative recombination are considered and the corresponding rates are derived at thermal equilibrium. The radiative lifetime is calculated from the inverse of the maximum rate for all the four possibilities. Results agree very well with experiments.
Keywords amorphous semiconductors
decay
effective mass
photoluminescence
radiative recombination
DOI http://dx.doi.org/10.1016/j.jlumin.2004.09.076   (check subscription with CDU E-Gateway service for CDU Staff and Students  check subscription with CDU E-Gateway in new window)
 
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Created: Wed, 28 Nov 2007, 14:16:08 CST