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Radiative lifetime and spontaneous emission in amorphous semiconductors

Singh, Jai (2005). Radiative lifetime and spontaneous emission in amorphous semiconductors. Journal of Optoelectronics and Advanced Materials,7(1):129-136.

Document type: Journal Article
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IRMA ID 80801245xPUB52
Title Radiative lifetime and spontaneous emission in amorphous semiconductors
Author Singh, Jai
Journal Name Journal of Optoelectronics and Advanced Materials
Publication Date 2005
Volume Number 7
Issue Number 1
ISSN 1454-4164   (check CDU catalogue open catalogue search in new window)
Start Page 129
End Page 136
Total Pages 8
Place of Publication Romania
Publisher Institutul National de Cercetare-Dezvoltare pentru Optoelectronica,National Institute of Research and Development for Optoelectronics
Field of Research 0204 - Condensed Matter Physics
0205 - Optical Physics
0303 - Macromolecular and Materials Chemistry
HERDC Category C1 - Journal Article (DEST)
Abstract A theory for the spontaneous emission due to radiative recombination of excitons in amorphous semiconductors is presented. Four possibilities are considered: (i) both the excited electron and hole are in their extended states, (ii) the electron is in the extended and the hole in tail states, (iii) the electron is in tail and the hole in extended states and (iv) both are in their tail states. It is found that the singlet excitonic radiative recombination for possibilities (i)-(iii) occurs in the nanosecond (ns) range, and that for possibility (iv) occurs in the microsecond (mu s) range. Results are compared with recent experiments and other theories.
Keywords amorphous semiconductors
excitons
photoluminescence
spontaneous emission
a-si-h
ge-h
photoluminescence
decay
Description for Link Link to published version
URL http://joam.inoe.ro/arhiva/pdf7_1/Singh.pdf
 
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Created: Wed, 28 Nov 2007, 14:16:08 CST