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Photoexcitation-induced processes in amorphous semiconductors

Singh, Jai (2005). Photoexcitation-induced processes in amorphous semiconductors. Applied Surface Science,248(1-4):50-55.

Document type: Journal Article
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IRMA ID 80801245xPUB53
Title Photoexcitation-induced processes in amorphous semiconductors
Author Singh, Jai
Journal Name Applied Surface Science
Publication Date 2005
Volume Number 248
Issue Number 1-4
ISSN 0169-4332   (check CDU catalogue open catalogue search in new window)
Start Page 50
End Page 55
Total Pages 6
Place of Publication Netherlands
Publisher Elsevier BV * North-Holland
Field of Research 0204 - Condensed Matter Physics
0912 - Materials Engineering
HERDC Category C1 - Journal Article (DEST)
Abstract Theories for the mechanism of photo-induced processes of photodarkening (PD), volume expansion (VE) in amorphous chalcogenides are presented. Rates of spontaneous emission of photons by radiative recombination of excitons in amorphous semiconductors are also calculated and applied to study the excitonic photoluminescence in a-Si:H. Results are compared with previous theories.
Keywords photo-induced processes
photodarkening
volume expansion
radiative recombination
amorphous semiconductors
photostructural changes
glassy semiconductors
model
gap
photoluminescence
states
chalcogenides
decay
DOI http://dx.doi.org/10.1016/j.apsusc.2005.03.031   (check subscription with CDU E-Gateway service for CDU Staff and Students  check subscription with CDU E-Gateway in new window)
 
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Created: Wed, 28 Nov 2007, 14:16:08 CST