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Approach to study the relation between optical energy gap and hydrogen concentration in hydrogenated amorphous silicon thin films

Zhu, Furong and Singh, Jai (1993). Approach to study the relation between optical energy gap and hydrogen concentration in hydrogenated amorphous silicon thin films. Journal of Applied Physics,73(9):4709-4711.

Document type: Journal Article
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Title Approach to study the relation between optical energy gap and hydrogen concentration in hydrogenated amorphous silicon thin films
Author Zhu, Furong
Singh, Jai
Journal Name Journal of Applied Physics
Publication Date 1993
Volume Number 73
Issue Number 9
ISSN 0021-8979   (check CDU catalogue  open catalogue search in new window)
Scopus ID 2-s2.0-0009051122
Start Page 4709
End Page 4711
Total Pages 3
Place of Publication United States of America
Publisher A I P Publishing LLC
Field of Research 240000 Physical Sciences
Abstract Using experimental plasmon loss energy of a‐Si the number of valence electrons per unit volume in amorphous silicon thin films is determined. The characteristics of hydrogen incorporation in silicon network is studied by a quantitative model assuming that the structure of a good quality a‐Si:H thin film dominantly consists of Si–H and Si–Si bonds only. Using the concept of Penn gap and bond polarizability, we have derived an expression for the optical energy gap as a function of hydrogen concentration for a‐Si:H thin films. The calculated results, thus, obtained agree very well with the experimental results.
DOI http://dx.doi.org/10.1063/1.352742   (check subscription with CDU E-Gateway service for CDU Staff and Students  check subscription with CDU E-Gateway in new window)
 
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Created: Fri, 29 Aug 2014, 20:24:16 CST by Anthony Hornby