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On the theory of laser sputtering through pairing of holes in compound semiconductors

Georgiev, Mladen and Singh, Jai (1992). On the theory of laser sputtering through pairing of holes in compound semiconductors. Applied Physics A: Solids and Surfaces,55(2):170-175.

Document type: Journal Article
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Title On the theory of laser sputtering through pairing of holes in compound semiconductors
Author Georgiev, Mladen
Singh, Jai
Journal Name Applied Physics A: Solids and Surfaces
Publication Date 1992
Volume Number 55
Issue Number 2
ISSN 0721-7250   (check CDU catalogue  open catalogue search in new window)
Scopus ID 2-s2.0-0010250724
Start Page 170
End Page 175
Total Pages 6
Place of Publication Germany
Publisher Springer-Verlag
Field of Research PHYSICAL SCIENCES
Abstract A simple kinetic model is used to explain the observed dependence of the sputtering quantum yield on the laser fluence. The mechanism of sputtering presented here involves pairing of two holes against their repulsive Coulomb barrier, which depends on the concentration of photoexcited charge carriers through Debye screening. A threshold laser fluence is obtained at a concentration of photoexcited charge carriers that suppresses the barrier sufficiently to allow the pairing of holes at the surface bonds. The bonds are broken and atoms are ejected from the surface. The temperature dependence of the threshold laser fluence is discussed. Results agree qualitatively with experiments and existing theories.
Keywords 72.90
73.20
73.90
DOI http://dx.doi.org/10.1007/BF00334219   (check subscription with CDU E-Gateway service for CDU Staff and Students  check subscription with CDU E-Gateway in new window)
 
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Created: Fri, 29 Aug 2014, 20:26:11 CST by Anthony Hornby