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Photoluminescence in High-Quality a-Ge:H

Ishii, S., Kurihara, M., Aoki, T., Shimakawa, K. and Singh, J. (2000). Photoluminescence in High-Quality a-Ge:H. Journal of Non-Crystalline Solids,266-269(Part 2):721-725.

Document type: Journal Article
Citation counts: Scopus Citation Count Cited 20 times in Scopus Article | Citations

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Title Photoluminescence in High-Quality a-Ge:H
Author Ishii, S.
Kurihara, M.
Aoki, T.
Shimakawa, K.
Singh, J.
Journal Name Journal of Non-Crystalline Solids
Publication Date 2000
Volume Number 266-269
Issue Number Part 2
ISSN 0022-3093   (check CDU catalogue open catalogue search in new window)
Scopus ID 2-s2.0-0000572713
Start Page 721
End Page 725
Total Pages 5
Place of Publication Amsterdam Netherlands
Publisher Elsevier Science
HERDC Category C1 - Journal Article (DEST)
Abstract We present quadrature frequency resolved spectroscopy (QFRS) measurements of photoluminescence (PL) in photoconductive and luminescent films of a-Ge:H with a defect density 1 × 1016 cm-3 obtained from electron cyclotron resonance (ECR) plasma chemical vapor deposition (PCVD), together with a study of PL and PL excitation (PLE) spectra. A double-peak lifetime distribution is observed with a short lifetime at 1 μs and a long one at 0.1 ms as observed in a-Si:H. The dependence of the two lifetimes and their corresponding relative quantum efficiencies on the e-h pair generation rate and temperature is also investigated. The occurrence of double peaks is attributed to the radiative recombination from singlet and triplet exciton states, and the exchange energy between singlet and triplet states is estimated to be 3.3 meV in a-Ge:H.
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Created: Fri, 12 Sep 2008, 08:35:25 CST by Administrator