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Exciton formation assisted by LO phonons in quantum wells

Oh, IK, Singh, J, Thilagam, A and Vengurlekar, AS (2000). Exciton formation assisted by LO phonons in quantum wells. Physical Review B (Condensed Matter and Materials Physics),62(3):2045-2050.

Document type: Journal Article
Citation counts: Scopus Citation Count Cited 19 times in Scopus Article | Citations

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Title Exciton formation assisted by LO phonons in quantum wells
Author Oh, IK
Singh, J
Thilagam, A
Vengurlekar, AS
Journal Name Physical Review B (Condensed Matter and Materials Physics)
Publication Date 2000
Volume Number 62
Issue Number 3
ISSN 0163-1829   (check CDU catalogue open catalogue search in new window)
Scopus ID 2-s2.0-0001064195
Start Page 2045
End Page 2050
Total Pages 6
Place of Publication New York, USA
Publisher The American Physical Society
HERDC Category C1 - Journal Article (DEST)
Abstract Kinetics of exciton formation involving LO phonons is investigated in quantum wells. Considering the formation of an exciton from a free excited electron-hole pair due to LO-phonon emission, an expression is derived for the rate of formation of an exciton as a function of carrier densities, temperature, and wave vector K‖ of the center of mass of excitons in quantum wells, and the formation time of an exciton is also calculated. The theory is applied to GaAs quantum wells, in which it is found that the exciton formation dominantly occurs at K‖≠0.
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Created: Fri, 12 Sep 2008, 08:35:25 CST by Administrator