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Assessment of the influence of charged dangling bonds on the short circuit current in amorphous silicon solar cells

Thilagam, A and Singh, J (2001). Assessment of the influence of charged dangling bonds on the short circuit current in amorphous silicon solar cells. Journal of Non-Crystalline Solids,288(1-3):66-72.

Document type: Journal Article
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Title Assessment of the influence of charged dangling bonds on the short circuit current in amorphous silicon solar cells
Author Thilagam, A
Singh, J
Journal Name Journal of Non-Crystalline Solids
Publication Date 2001
Volume Number 288
Issue Number 1-3
ISSN 0022-3093   (check CDU catalogue open catalogue search in new window)
Scopus ID 2-s2.0-0035422371
Start Page 66
End Page 72
Total Pages 7
Place of Publication Amsterdam, Netherlands
Publisher Elsevier Science
HERDC Category C1 - Journal Article (DEST)
Abstract A theoretical study of the charged dangling bonds in p-i-n amorphous silicon (a-Si:H) solar cells is presented. An improved analytical expression of the bulk collection efficiency is derived incorporating charged dangling bonds. It is used in calculating the short circuit current employing the admittance analysis method to study the effect of D+ and D(-)states. The method is extended to obtain results when the generation of charge carriers in the i-layer is dependent on position. The theory is general and can be applied to any multi-layered device structure. (C) 2001 Elsevier Science B.V. All rights reserved.
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DOI http://dx.doi.org/10.1016/S0022-3093(01)00621-4   (check subscription with CDU E-Gateway service for CDU Staff and Students  check subscription with CDU E-Gateway in new window)
 
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