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Radiative recombination of excitions in amorphous semiconductors

Singh, Jai (2005). Radiative recombination of excitions in amorphous semiconductors. Journal of Luminescence,112(1-4):40-44.

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Title Radiative recombination of excitions in amorphous semiconductors
Author Singh, Jai
Journal Name Journal of Luminescence
Publication Date 2005
Volume Number 112
Issue Number 1-4
ISSN 0022-2313   (check CDU catalogue open catalogue search in new window)
Start Page 40
End Page 44
Total Pages 5
Place of Publication Netherlands
Publisher Elsevier BV * North-Holland
Field of Research 240000 Physical Sciences
Abstract A theory for calculating the radiative lifetime of excitons in amorphous semiconductors is presented. Four possibilities of excitonic radiative recombination are considered and the corresponding rates are derived at thermal equilibrium. The radiative lifetime is calculated from the inverse of the maximum rate for all the four possibilities. Results agree very well with experiments.
Keywords Photoluminescence
Amorphous semiconductors
Effective mass
Radiative recombination
DOI http://dx.doi.org/doi:10.1016/j.jlumin.2004.09.076   (check subscription with CDU E-Gateway service for CDU Staff and Students  check subscription with CDU E-Gateway in new window)
Description for Link Link to published version
URL http://www.sciencedirect.com/science/article/pii/S0022231304003916
 
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Created: Tue, 14 Jun 2016, 09:58:19 CST by Marion Farram