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Stark shifts of charged particles in semiconductor quantum wells

Thilagam, A. (1996). Stark shifts of charged particles in semiconductor quantum wells. Applied Physics A,64(1):83-89.

Document type: Journal Article
Citation counts: Scopus Citation Count Cited 3 times in Scopus Article | Citations

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Title Stark shifts of charged particles in semiconductor quantum wells
Author Thilagam, A.
Journal Name Applied Physics A
Publication Date 1996
Volume Number 64
Issue Number 1
ISSN 0947-8396   (check CDU catalogue open catalogue search in new window)
Scopus ID 2-s2.0-0030781885
Start Page 83
End Page 89
Total Pages 7
Place of Publication Germany
Publisher Springer Publishing Company
HERDC Category C1 - Journal Article (DEST)
Abstract We calculate the effect of a homogeneous electric field on electrons, holes and excitons confined in a quantum well structure consisting of alternate thin layers of well and barrier material. The electric field which acts perpendicular to the quantum well is taken as a perturbation on the quantum well structure confining the charges. The electron and hole energies in the conduction and valence subbands are calculated by solving a one-dimensional Schrödinger equation. The exciton binding energy is calculated using an improved excitonic model. Results obtained indicate the importance of higher-order excitons in optical transitions at high electric fields.
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