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Excitonic contribution to photoluminescence in amorphous semiconductors

Singh, Jai, Aoki, T. and Shimakawa, K. (2002). Excitonic contribution to photoluminescence in amorphous semiconductors. Philosophical Magazine B,82(7):855-871.

Document type: Journal Article
Citation counts: Scopus Citation Count Cited 13 times in Scopus Article | Citations

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Title Excitonic contribution to photoluminescence in amorphous semiconductors
Author Singh, Jai
Aoki, T.
Shimakawa, K.
Journal Name Philosophical Magazine B
Publication Date 2002
Volume Number 82
Issue Number 7
ISSN 1463-6417   (check CDU catalogue open catalogue search in new window)
Scopus ID 2-s2.0-0037053516
Start Page 855
End Page 871
Total Pages 17
Place of Publication London, UK
Publisher Taylor & Francis
Field of Research 0204 - Condensed Matter Physics
HERDC Category C1 - Journal Article (DEST)
Abstract Applying the effective-mass approach, the energy eigenvalues of excitonic states in amorphous semiconductors are derived. It is shown that Wannier-Mott-type excitons can indeed be formed in amorphous solids. The results show that the occurrence of the double photoluminescence (PL) lifetime distribution peak, fast and slow, in hydrogenated amorphous silicon (a-Si:H) and hydrogenated amorphous germanium (a-Ge: H) can unambiguously be assigned to radiative recombinations from singlet and triplet excitonic states respectively. The dependence of PL peaks on the temperature and generation rate in a-Si: H and a-Ge: H is also discussed. The approach is general and simple and can be applied to study the charge-carrier transport and PL properties in any amorphous solid.
Keywords luminescence
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Created: Fri, 12 Sep 2008, 08:35:25 CST by Administrator